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SUD35N05-26L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C unless noted)
2.0
1.6
V GS = 10 V
I D = 20 A
100
1.2
0.8
0.4
10
T J = 175 °C
T J = 25 °C
0.0
1
- 50
- 25
0 25 50 75 100 125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.2
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
THERMAL RATINGS
40
500
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Limited
by R DS(on) *
100
10 μs
30
100 μ s
10
20
10 ms
100 ms
10
1
T C = 25 °C
1s
DC
Single Pulse
0
0
25
50 75 100 125
150
175
0.1
0.1
1 10 100
T C - Case Temperature (°C)
Max. Avalanche and Drain Current vs. Case Temperature
2
V DS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which R DS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
30
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71443 .
Document Number: 71443
S12-1360-Rev. C, 11-Jun-12
For more information please contact: pmostechsupport@vishay.com
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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